Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals

Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Transactions, 98-C(5):429-433, 2015. [doi]

Authors

Sungjun Kim

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Sunghun Jung

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Min-Hwi Kim

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Seongjae Cho

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Byung-Gook Park

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