Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Transactions, 98-C(5):429-433, 2015. [doi]
@article{KimJKCP15,
title = {Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals},
author = {Sungjun Kim and Sunghun Jung and Min-Hwi Kim and Seongjae Cho and Byung-Gook Park},
year = {2015},
url = {http://search.ieice.org/bin/summary.php?id=e98-c_5_429},
researchr = {https://researchr.org/publication/KimJKCP15},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {98-C},
number = {5},
pages = {429-433},
}