Low power 8T SRAM using 32nm independent gate FinFET technology - researchr publication authors

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Young Bok Kim, Yong-Bin Kim, Fabrizio Lombardi. Low power 8T SRAM using 32nm independent gate FinFET technology. In 21st Annual IEEE International SoC Conference, SoCC 2008, September 17-20, 2008, Radisson Hotel, Newport Beach, CA, USA, Proceedings. pages 247-250, IEEE, 2008. [doi]

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