Young Bok Kim, Yong-Bin Kim, Fabrizio Lombardi. Low power 8T SRAM using 32nm independent gate FinFET technology. In 21st Annual IEEE International SoC Conference, SoCC 2008, September 17-20, 2008, Radisson Hotel, Newport Beach, CA, USA, Proceedings. pages 247-250, IEEE, 2008. [doi]
@inproceedings{KimKL08:5,
title = {Low power 8T SRAM using 32nm independent gate FinFET technology},
author = {Young Bok Kim and Yong-Bin Kim and Fabrizio Lombardi},
year = {2008},
doi = {10.1109/SOCC.2008.4641521},
url = {http://dx.doi.org/10.1109/SOCC.2008.4641521},
researchr = {https://researchr.org/publication/KimKL08%3A5},
cites = {0},
citedby = {0},
pages = {247-250},
booktitle = {21st Annual IEEE International SoC Conference, SoCC 2008, September 17-20, 2008, Radisson Hotel, Newport Beach, CA, USA, Proceedings},
publisher = {IEEE},
}