A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination - researchr publication authors

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Justin J. Kim, Wonho Lee, James F. Buckwalter. A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 171-174, IEEE, 2023. [doi]

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