Justin J. Kim, Wonho Lee, James F. Buckwalter. A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 171-174, IEEE, 2023. [doi]
@inproceedings{KimLB23,
title = {A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination},
author = {Justin J. Kim and Wonho Lee and James F. Buckwalter},
year = {2023},
doi = {10.1109/BCICTS54660.2023.10310903},
url = {https://doi.org/10.1109/BCICTS54660.2023.10310903},
researchr = {https://researchr.org/publication/KimLB23},
cites = {0},
citedby = {0},
pages = {171-174},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023},
publisher = {IEEE},
isbn = {979-8-3503-0764-1},
}