An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement

Tae-Hyoung Kim, Jason Liu, Chris H. Kim. An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement. In Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007, DoubleTree Hotel, San Jose, California, USA, September 16-19, 2007. pages 241-244, IEEE, 2007. [doi]

Abstract

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