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High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications

Youngmin Kim, Hongjong Park, IlJin Lee, Joonhoi Hur, Sangmin Yoo. High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 124-125, IEEE, 2022. [doi]

Authors

Youngmin Kim

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Hongjong Park

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IlJin Lee

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Joonhoi Hur

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Sangmin Yoo

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