Youngmin Kim, Hongjong Park, IlJin Lee, Joonhoi Hur, Sangmin Yoo. High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 124-125, IEEE, 2022. [doi]
@inproceedings{KimPLHY22,
title = {High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications},
author = {Youngmin Kim and Hongjong Park and IlJin Lee and Joonhoi Hur and Sangmin Yoo},
year = {2022},
doi = {10.1109/VLSITechnologyandCir46769.2022.9830256},
url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830256},
researchr = {https://researchr.org/publication/KimPLHY22},
cites = {0},
citedby = {0},
pages = {124-125},
booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9772-5},
}