High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash

Kyungmoon Kim, Yujeong Seo, Sejun Park, Woojae Jang, Dongho Yoo, Joonsung Lim, Il Han Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur. High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

Abstract is missing.