Kanguk Kim, Youngwoo Son, Hoin Ryu, ByungHyun Lee, Jooncheol Kim, Hyunsu Shin, Joonyoung Kang, Jihun Kim, Shinwoo Jeong, Kyosuk Chae, Dongkak Lee, Ilwoo Jung, Yongkwan Kim, Boyoung Song, Jeonghoon Oh, Jungwoo Song, Seguen Park, Keumjoo Lee, Hyodong Ban, Jiyoung Kim, Jooyoung Lee. 14nm DRAM Development and Manufacturing. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{KimSRLKSKKJCLJK23,
title = {14nm DRAM Development and Manufacturing},
author = {Kanguk Kim and Youngwoo Son and Hoin Ryu and ByungHyun Lee and Jooncheol Kim and Hyunsu Shin and Joonyoung Kang and Jihun Kim and Shinwoo Jeong and Kyosuk Chae and Dongkak Lee and Ilwoo Jung and Yongkwan Kim and Boyoung Song and Jeonghoon Oh and Jungwoo Song and Seguen Park and Keumjoo Lee and Hyodong Ban and Jiyoung Kim and Jooyoung Lee},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185314},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185314},
researchr = {https://researchr.org/publication/KimSRLKSKKJCLJK23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}