Jeongkyun Kim, Byungho Yook, Youngo Lee, Taemin Choi, Kyuwon Choi, Chanho Lee, Juchang Lee, Hyeongcheol Kim, Seok Yun, Changhoon Do, Minwoo Kwak, Mijoung Kim, Yunrong Li, Hoyoung Tang, Jaeyoung Kim, Inhak Lee, Dongwook Seo, Sangyeop Baeck. A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology. J. Solid-State Circuits, 59(4):1216-1224, April 2024. [doi]
Abstract is missing.