Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

Dongyoung Kim, Nick Yun, WoongJe Sung. Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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