Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks - researchr publication authors

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M. P. King, J. R. Dickerson, S. DasGupta, M. J. Marinella, R. J. Kaplar, Daniel Piedra, M. Sun, Tomas Palacios. Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

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