M. P. King, J. R. Dickerson, S. DasGupta, M. J. Marinella, R. J. Kaplar, Daniel Piedra, M. Sun, Tomas Palacios. Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]
@inproceedings{KingDDMKPSP15,
title = {Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks},
author = {M. P. King and J. R. Dickerson and S. DasGupta and M. J. Marinella and R. J. Kaplar and Daniel Piedra and M. Sun and Tomas Palacios},
year = {2015},
doi = {10.1109/IRPS.2015.7112689},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112689},
researchr = {https://researchr.org/publication/KingDDMKPSP15},
cites = {0},
citedby = {0},
pages = {2},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}