Masahiro Kobayashi, Yusuke Onuki, Kazunari Kawabata, Hiroshi Sekine, Toshiki Tsuboi, Yasushi Matsuno, Hidekazu Takahashi, Toru Koizumi, Katsuhito Sakurai, Hiroshi Yuzurihara, Shunsuke Inoue, Takeshi Ichikawa. - temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter. In 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, CA, USA, February 5-9, 2017. pages 74-75, IEEE, 2017. [doi]
Abstract is missing.