Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation

Wei Kong, Paul C. Parries, G. Wang, Subramanian S. Iyer. Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation. In Douglas Young, Nur A. Touba, editors, 2008 IEEE International Test Conference, ITC 2008, Santa Clara, California, USA, October 26-31, 2008. pages 1-7, IEEE, 2008. [doi]

@inproceedings{KongPWI08,
  title = {Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation},
  author = {Wei Kong and Paul C. Parries and G. Wang and Subramanian S. Iyer},
  year = {2008},
  doi = {10.1109/TEST.2008.4700556},
  url = {http://dx.doi.org/10.1109/TEST.2008.4700556},
  researchr = {https://researchr.org/publication/KongPWI08},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {2008 IEEE International Test Conference, ITC 2008, Santa Clara, California, USA, October 26-31, 2008},
  editor = {Douglas Young and Nur A. Touba},
  publisher = {IEEE},
  isbn = {978-1-4244-2403-0},
}