A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability

Debin Kong, Jia Yuan, Shan-Shan Li, Heng You, Shushan Qiao. A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability. IEICE Electronic Express, 15(20):20180758, 2018. [doi]

Abstract

Abstract is missing.