An 8b DAC-Based SST TX Using Metal Gate Resistors with 1.4pJ/b Efficiency at 112Gb/s PAM-4 and 8-Tap FFE in 7iim CMOS

Marcel A. Kossel, Vishal Khatri, Matthias Braendli, Pier Andrea Francese, Thomas Morf, Serdar A. Yonar, Mridula Prathapan, Eric J. Lukes, Raymond A. Richetta, Carrie Cox. An 8b DAC-Based SST TX Using Metal Gate Resistors with 1.4pJ/b Efficiency at 112Gb/s PAM-4 and 8-Tap FFE in 7iim CMOS. In IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021. pages 130-132, IEEE, 2021. [doi]

Abstract

Abstract is missing.