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A DDR3/4 memory link TX supporting 24-40 Ω, 0.8-1.6 V, 0.8-5.0 Gb/s with slew rate control and thin oxide output stages in 22-nm CMOS SOI

Marcel A. Kossel, Christian Menolfi, Thomas Toifl, Pier Andrea Francese, Matthias Braendli, Thomas Morf, Lukas Kull, Toke Meyer Andersen, Hazar Yueksel. A DDR3/4 memory link TX supporting 24-40 Ω, 0.8-1.6 V, 0.8-5.0 Gb/s with slew rate control and thin oxide output stages in 22-nm CMOS SOI. In ESSCIRC 2014 - 40th European Solid State Circuits Conference, Venice Lido, Italy, September 22-26, 2014. pages 135-138, IEEE, 2014. [doi]

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