Shraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha. Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 214-217, IEEE, 2015. [doi]
@inproceedings{KothariJVNCGL15,
title = {Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications},
author = {Shraddha Kothari and Chandan Joishi and Dhirendra Vaidya and Hasan Nejad and Benjamin Colombeau and Swaroop Ganguly and Saurabh Lodha},
year = {2015},
doi = {10.1109/ESSDERC.2015.7324753},
url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324753},
researchr = {https://researchr.org/publication/KothariJVNCGL15},
cites = {0},
citedby = {0},
pages = {214-217},
booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7135-3},
}