Toshiyuki Kouchi, Mami Kakoi, Noriyasu Kumazaki, Akio Sugahara, Akihiro Imamoto, Yasufumi Kajiyama, Yuri Terada, Sanad Bushnaq, Naoaki Kanagawa, Takuyo Kodama, Ryo Fukuda, Hiromitsu Komai, Norichika Asaoka, Hidekazu Ohnishi, Ryosuke Isomura, Takaya Handa, Kensuke Yamamoto, Yuki Ishizaki, Yoko Deguchi, Atsushi Okuyama, Junichi Sato, Hiroki Yabe, Cynthia Hsu, Masahiro Yoshihara. A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs. J. Solid-State Circuits, 56(1):225-234, 2021. [doi]
@article{KouchiKKSIKTBKK21,
title = {A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs},
author = {Toshiyuki Kouchi and Mami Kakoi and Noriyasu Kumazaki and Akio Sugahara and Akihiro Imamoto and Yasufumi Kajiyama and Yuri Terada and Sanad Bushnaq and Naoaki Kanagawa and Takuyo Kodama and Ryo Fukuda and Hiromitsu Komai and Norichika Asaoka and Hidekazu Ohnishi and Ryosuke Isomura and Takaya Handa and Kensuke Yamamoto and Yuki Ishizaki and Yoko Deguchi and Atsushi Okuyama and Junichi Sato and Hiroki Yabe and Cynthia Hsu and Masahiro Yoshihara},
year = {2021},
doi = {10.1109/JSSC.2020.3028393},
url = {https://doi.org/10.1109/JSSC.2020.3028393},
researchr = {https://researchr.org/publication/KouchiKKSIKTBKK21},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {56},
number = {1},
pages = {225-234},
}