Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective - researchr publication

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Elias Kougianos, Saraju P. Mohanty. Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective. In 20th International Conference on VLSI Design (VLSI Design 2007), Sixth International Conference on Embedded Systems (ICES 2007), 6-10 January 2007, Bangalore, India. pages 195-200, IEEE Computer Society, 2007. [doi]

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