Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs

Masahiro Koyama, Mikaël Casse, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold. Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 73-76, IEEE, 2012. [doi]

Abstract

Abstract is missing.