N. K. Kranthi, Radhakrishnan Sithanandam, Rama Komaragiri. Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics. In 28th International Conference on VLSI Design, VLSID 2015, Bangalore, India, January 3-7, 2015. pages 282-285, IEEE Computer Society, 2015. [doi]
@inproceedings{KranthiSK15, title = {Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics}, author = {N. K. Kranthi and Radhakrishnan Sithanandam and Rama Komaragiri}, year = {2015}, doi = {10.1109/VLSID.2015.54}, url = {http://doi.ieeecomputersociety.org/10.1109/VLSID.2015.54}, researchr = {https://researchr.org/publication/KranthiSK15}, cites = {0}, citedby = {0}, pages = {282-285}, booktitle = {28th International Conference on VLSI Design, VLSID 2015, Bangalore, India, January 3-7, 2015}, publisher = {IEEE Computer Society}, isbn = {978-1-4799-6658-5}, }