N. K. Kranthi, Radhakrishnan Sithanandam, Rama Komaragiri. Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics. In 28th International Conference on VLSI Design, VLSID 2015, Bangalore, India, January 3-7, 2015. pages 282-285, IEEE Computer Society, 2015. [doi]
Abstract is missing.