Comparative BTI reliability analysis of SRAM cell designs in nano-scale CMOS technology

Shreyas Kumar Krishnappa, Hamid Mahmoodi. Comparative BTI reliability analysis of SRAM cell designs in nano-scale CMOS technology. In Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011, Santa Clara, California, USA, 14-16 March 2011. pages 384-389, IEEE, 2011. [doi]

@inproceedings{KrishnappaM11,
  title = {Comparative BTI reliability analysis of SRAM cell designs in nano-scale CMOS technology},
  author = {Shreyas Kumar Krishnappa and Hamid Mahmoodi},
  year = {2011},
  doi = {10.1109/ISQED.2011.5770755},
  url = {http://dx.doi.org/10.1109/ISQED.2011.5770755},
  tags = {analysis, reliability},
  researchr = {https://researchr.org/publication/KrishnappaM11},
  cites = {0},
  citedby = {0},
  pages = {384-389},
  booktitle = {Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011, Santa Clara, California, USA, 14-16 March 2011},
  publisher = {IEEE},
  isbn = {978-1-61284-914-0},
}