Impact of mechanical strain on wakeup of HfO2 ferroelectric memory

Anastasiia Kruv, S. R. C. McMitchell, Sergiu Clima, O. O. Okudur, N. Ronchi, Geert Van den bosch, M. Gonzalez, I. De Wolf, Jan Van Houdt. Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-6, IEEE, 2021. [doi]

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