A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation

Boncheol Ku, Jae-Min Sim, Jae Seok Hur, Jae Kyeong Jeong, Yun Heub Song, ChangHwan Choi. A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation. In IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024. pages 1-4, IEEE, 2024. [doi]

Abstract

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