Song-Hyeon Kuk, Jae Hoon Han, Bong-Ho Kim, Junpyo Kim, Sang-Hyeon Kim. Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]
Abstract is missing.