Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang. 2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology. J. Solid-State Circuits, 52(1):229-239, 2017. [doi]
@article{KulkarniKKNGKZ17,
title = {2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology},
author = {Jaydeep P. Kulkarni and John Keane and Kyung-Hoae Koo and Satyanand Nalam and Zheng Guo and Eric Karl and Kevin Zhang},
year = {2017},
doi = {10.1109/JSSC.2016.2607219},
url = {http://dx.doi.org/10.1109/JSSC.2016.2607219},
researchr = {https://researchr.org/publication/KulkarniKKNGKZ17},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {52},
number = {1},
pages = {229-239},
}