2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology - researchr publication

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Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang. 2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology. J. Solid-State Circuits, 52(1):229-239, 2017. [doi]

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