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Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta. Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectronics Journal, 45(11):1508-1514, 2014. [doi]

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