A 6T-SRAM in 28nm FDSOI technology with Vmin of 0.52V using assisted read and write operation

Ashish Kumar, Vinay Kumar, Dhori Kedar Janardan, G. S. Visweswaran, Kaushik Saha. A 6T-SRAM in 28nm FDSOI technology with Vmin of 0.52V using assisted read and write operation. In 2015 International Conference on IC Design & Technology, ICICDT 2015, Leuven, Belgium, June 1-3, 2015. pages 1-4, IEEE, 2015. [doi]

Abstract

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