Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET

Nitish Kumar, Aakanksha Mishra, Ankur Gupta, Pushpapraj Singh. Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET. Microelectronics Journal, 146:106155, 2024. [doi]

@article{KumarMGS24,
  title = {Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET},
  author = {Nitish Kumar and Aakanksha Mishra and Ankur Gupta and Pushpapraj Singh},
  year = {2024},
  doi = {10.1016/j.mejo.2024.106155},
  url = {https://doi.org/10.1016/j.mejo.2024.106155},
  researchr = {https://researchr.org/publication/KumarMGS24},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {146},
  pages = {106155},
}