Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range - researchr publication authors

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Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta. Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectronics Reliability, 52(6):974-983, 2012. [doi]

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