Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range - researchr publication related

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Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta. Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectronics Reliability, 52(6):974-983, 2012. [doi]

The following publications are possibly variants of this publication:

Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applicationsVandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta. mr, 52(8):1610-1612, 2012. [doi]

An analytical drain current model for graded channel cylindrical/surrounding gate MOSFETHarsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta. mj, 38(3):352-359, 2007. [doi]

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