Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range

Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta. Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectronics Reliability, 52(6):974-983, 2012. [doi]

@article{KumariSGG12,
  title = {Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range},
  author = {Vandana Kumari and Manoj Saxena and R. S. Gupta and Mridula Gupta},
  year = {2012},
  doi = {10.1016/j.microrel.2011.12.021},
  url = {http://dx.doi.org/10.1016/j.microrel.2011.12.021},
  researchr = {https://researchr.org/publication/KumariSGG12},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {52},
  number = {6},
  pages = {974-983},
}