Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory

Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Saysamone Pittikoun. Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory. In 14th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2006), 2-4 August 2006, Taipei, Taiwan. pages 77-79, IEEE Computer Society, 2006. [doi]

@inproceedings{KuoCKLHKCWHP06,
  title = {Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory},
  author = {Victor Chao-Wei Kuo and Chih-Ming Chao and Chih-Kai Kang and Li-Wei Liu and Tzung-Bin Huang and Liang-Tai Kuo and Shi-Hsien Chen and Houng-Chi Wei and Hann-Ping Hwang and Saysamone Pittikoun},
  year = {2006},
  doi = {10.1109/MTDT.2006.10},
  url = {http://doi.ieeecomputersociety.org/10.1109/MTDT.2006.10},
  tags = {data-flow programming},
  researchr = {https://researchr.org/publication/KuoCKLHKCWHP06},
  cites = {0},
  citedby = {0},
  pages = {77-79},
  booktitle = {14th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2006), 2-4 August 2006, Taipei, Taiwan},
  publisher = {IEEE Computer Society},
  isbn = {0-7695-2572-5},
}