Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory

Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Saysamone Pittikoun. Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory. In 14th IEEE International Workshop on Memory Technology, Design, and Testing (MTDT 2006), 2-4 August 2006, Taipei, Taiwan. pages 77-79, IEEE Computer Society, 2006. [doi]

Abstract

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