A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology - researchr publication authors

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Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa. A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Transactions, 90-C(11):2146-2156, 2007. [doi]

This author has not been identified. Look up 'Hideaki Kurata' in GoogleThis author has not been identified. Look up 'Satoshi Noda' in GoogleThis author has not been identified. Look up 'Yoshitaka Sasago' in GoogleThis author has not been identified. Look up 'Kazuo Otsuga' in GoogleThis author has not been identified. Look up 'Tsuyoshi Arigane' in GoogleThis author has not been identified. Look up 'Tetsufumi Kawamura' in GoogleThis author has not been identified. It may be one of the following persons:

Takashi Kobayashi

Look up 'Takashi Kobayashi' in GoogleThis author has not been identified. Look up 'Hitoshi Kume' in GoogleThis author has not been identified. Look up 'Kazuki Homma' in GoogleThis author has not been identified. Look up 'Teruhiko Ito' in GoogleThis author has not been identified. Look up 'Yoshinori Sakamoto' in GoogleThis author has not been identified. Look up 'Masahiro Shimizu' in GoogleThis author has not been identified. Look up 'Yoshinori Ikeda' in GoogleThis author has not been identified. Look up 'Osamu Tsuchiya' in GoogleThis author has not been identified. Look up 'Kazunori Furusawa' in Google

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