A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology

Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa. A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Transactions, 90-C(11):2146-2156, 2007. [doi]

@article{KurataNSOAKKKHISSITF07,
  title = {A 126 mm:::2::: 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology},
  author = {Hideaki Kurata and Satoshi Noda and Yoshitaka Sasago and Kazuo Otsuga and Tsuyoshi Arigane and Tetsufumi Kawamura and Takashi Kobayashi and Hitoshi Kume and Kazuki Homma and Teruhiko Ito and Yoshinori Sakamoto and Masahiro Shimizu and Yoshinori Ikeda and Osamu Tsuchiya and Kazunori Furusawa},
  year = {2007},
  doi = {10.1093/ietele/e90-c.11.2146},
  url = {http://dx.doi.org/10.1093/ietele/e90-c.11.2146},
  researchr = {https://researchr.org/publication/KurataNSOAKKKHISSITF07},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {90-C},
  number = {11},
  pages = {2146-2156},
}