The following publications are possibly variants of this publication:
- Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash MemoriesKazuo Otsuga, Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi. ieicet, 90-C(4):772-778, 2007. [doi]
- A 130-nm CMOS 95-mm:::2::: 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming ThroughputHideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa. ieicet, 89-C(10):1469-1479, 2006. [doi]
- A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical ModelShinya Kajiyama, Ken ichiro Sonoda, Kazuo Otsuga, Hideaki Kurata, Kiyoshi Ishikawa. ieicet, 91-C(4):526-533, 2008. [doi]