Circuit level prediction of device performance degradation due to negative bias temperature stress

Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi. Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectronics Reliability, 47(6):930-936, 2007. [doi]

@article{KurodaTWMYSO07,
  title = {Circuit level prediction of device performance degradation due to negative bias temperature stress},
  author = {Rihito Kuroda and Akinobu Teramoto and Kazufumi Watanabe and Michihiko Mifuji and Takahisa Yamaha and Shigetoshi Sugawa and Tadahiro Ohmi},
  year = {2007},
  doi = {10.1016/j.microrel.2006.06.013},
  url = {http://dx.doi.org/10.1016/j.microrel.2006.06.013},
  researchr = {https://researchr.org/publication/KurodaTWMYSO07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {6},
  pages = {930-936},
}