Circuit level prediction of device performance degradation due to negative bias temperature stress - researchr publication

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Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi. Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectronics Reliability, 47(6):930-936, 2007. [doi]

Abstract is missing.

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