Circuit level prediction of device performance degradation due to negative bias temperature stress

Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi. Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectronics Reliability, 47(6):930-936, 2007. [doi]

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