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25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications

Young-Cheon Kwon, Suk-Han Lee, Jaehoon Lee, Sang-Hyuk Kwon, Je-Min Ryu, Jong-Pil Son, Seongil O, Hak-soo Yu, Haesuk Lee, Soo Young Kim, Youngmin Cho, Jin Guk Kim, Jongyoon Choi, Hyunsung Shin, Jin Kim, BengSeng Phuah, HyoungMin Kim, Myeong Jun Song, Ahn Choi, Daeho Kim, Sooyoung Kim, Eun-Bong Kim, David Wang, Shinhaeng Kang, Yuhwan Ro, Seungwoo Seo, Joon Ho Song, Jaeyoun Youn, Kyomin Sohn, Nam Sung Kim. 25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications. In IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, CA, USA, February 13-22, 2021. pages 350-352, IEEE, 2021. [doi]

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