Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology - researchr publication authors

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W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, K. H. Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan. Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. Microelectronics Reliability, 48(6):919-922, 2008. [doi]

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