Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology

W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, K. H. Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan. Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. Microelectronics Reliability, 48(6):919-922, 2008. [doi]

Abstract

Abstract is missing.