Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology - researchr publication related

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W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, K. H. Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan. Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. Microelectronics Reliability, 48(6):919-922, 2008. [doi]

The following publications are possibly variants of this publication:

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETsSeonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang. mr, 52(9-10):1949-1952, 2012. [doi]

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